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1 article(s) from Trompenaars, Piet H F

Sidewall angle tuning in focused electron beam-induced processing

Sangeetha Hari,
Willem F. van Dorp,
Johannes J. L. Mulders,
Piet H. F. Trompenaars,
Pieter Kruit and
Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

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Figure 1: SE image of a deposited FEBID carbon line, top view (a) and FIB cross section (b). The line was dep...

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Figure 2: Simulated etching by FEBIE of a planar FEBID surface (a) and the evolution of the sloped sidewalls ...

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Figure 3: (a) Top view SE image of the array of EBID deposits along with the etching scheme: The array of etc...

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Figure 4: (a–j) Sidewall evolution as a result of the etching series. The frames (a) to (j) show the ten depo...

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Figure 5: Resulting profiles for continued etching from below for 3 (a), 10 (b), 20 (c), and 45 (d) consecuti...

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Figure 6: Simulations showing the evolution of the half-Gaussian-shaped sidewall (with σ = 200) of a deposit ...

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Figure 7: (a) Top view SE image and (b) FIB cross section of an as-deposited FEBID structure.

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Figure 8: (a) Top view SE image after etching of the sidewall and (b) after the cleaning step. (c) FIB cross ...

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Published 23 Apr 2024

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